cny17f document number 83607 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 1 1 2 3 6 5 4 nc c e a c nc 18216 optocoupler, phototransisto r output, no base connection features ? breakdown voltage, 5300 v rms ? no base terminal connection for improved common mode interface immunity ? long term stability ? industry standard dual-in-line package ? lead-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-2 (vde0884) din en 60747-5-5 pending ? bsi iec60950 iec60065 ? fimko description the cny17f is an optocoup ler consisting af a gal- lium arsenide infrared emitting diode optically cou- pled to a silicon planar pho totransistor detector in a plastic plug-in dip-6 package. the coupling device is suitab le for signal transmission between two electrically separated circuits. the potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages. in contrast to the cny17 series, the base terminal of the f type is not conected, resulting in a substantially improved common-mode interference immunity. order information for additional information on t he available options refer to option information. part remarks cny17f-1 ctr 40 - 80 %, dip-6 cny17f-2 ctr 63 - 125 %, dip-6 cny17f-3 ctr 100 - 200 %, dip-6 cny17f-4 ctr 160 - 320 %, dip-6 cny17f-1x006 ctr 40 - 80 %, dip-6 400 mil (option 6) cny17f-1x007 ctr 40 - 80 %, smd-6 (option 7) cny17f-1x009 ctr 40 - 80 %, smd-6 (option 9) cny17f-2x006 ctr 63 - 125 %, dip-6 400 mil (option 6) cny17f-2x007 ctr 63 - 125 %, smd-6 (option 7) cny17f-2x009 ctr 63 - 125 %, smd-6 (option 9) cny17f-3x006 ctr 100 - 200 %, dip-6 400 mil (option 6) cny17f-3x007 ctr 100 - 200 %, smd-6 (option 7) cny17f-3x009 ctr 100 - 200 %, smd-6 (option 9) cny17f-4x006 ctr 160 - 320 %, dip-6 400 mil (option 6) cny17f-4x007 ctr 160 - 320 %, smd-6 (option 7) cny17f-4x009 ctr 160 - 320 %, smd-6 (option 9) e3
www.vishay.com 2 document number 83607 rev. 1.5, 26-oct-04 cny17f vishay semiconductors absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output coupler parameter test condition symbol value unit reverse voltage v r 6.0 v dc forward current i f 60 ma surge forward current t 10 si fsm 2.5 a power dissipation p diss 100 mw parameter test condition symbol value unit collector-emitter breakdown voltage bv ceo 70 v collector current i c 50 ma t 1.0 ms i c 100 ma total power dissipation p diss 150 mw parameter test condition symbol value unit isolation test voltage (between emitter and detector referred to standard climate 23/50 din 50014) v iso 5300 v rms creepage 7.0 mm clearance 7.0 mm isolation thickness between emitter and detector 0.4 mm comparative tracking index per din iec 112/vde 0303, part 1 175 isolation resistance v io = 500 v r io 10 11 storage temperature range t stg - 55 to + 150 c ambient temperature range t amb - 55 to + 100 c junction temperature t j 100 c soldering temperature max. 10 s, dip soldering: distance to seating plane 1.5 mm t sld 260 c
cny17f document number 83607 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 3 electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler current transfer ratio current transfer ratio i c /i f at v ce = 5.0 v, 25 c and collector-emi tter leakage current by dash number parameter test condition symbol min ty p. max unit forward voltage i f = 60 ma v f 1.25 1.65 v breakdown voltage i r = 10 av br 6.0 v reserve current v r = 6.0 v i r 0.01 10 a capacitance v r = 0 v, f = 1.0 mhz c o 25 pf thermal resistance r th 750 k/w parameter test condition symbol min ty p. max unit collector-emitter capacitance v ce = 5.0 v, f = 1.0 mhz c ce 5.2 pf base - collector capacitance v ce = 5.0 v, f = 1.0 mhz c bc 6.5 pf emitter - base capacitance v ce = 5.0 v, f = 1.0 mhz c eb 7.5 pf thermal resistance r th 500 k/w parameter test condition part symbol min ty p. max unit saturation voltage, collector- emitter i f = 10 ma, i c = 2.5 ma v cesat 0.25 0.4 v coupling capacitance c c 0.6 pf collector-emitter leakage current v ce = 10 v cny17f-1 i ceo 2.0 50 na cny17f-2 i ceo 2.0 50 na cny17f-3 i ceo 5.0 100 na cny17f-4 i ceo 5.0 100 na parameter test condition part symbol min ty p. max unit current transfer ratio i f = 10 ma cny17f-1 ctr 40 80 % cny17f-2 ctr 63 125 % cny17f-3 ctr 100 200 % cny17f-4 ctr 160 320 % i f = 1.0 ma cny17f-1 ctr 13 30 % cny17f-2 ctr 22 45 % cny17f-3 ctr 34 70 % cny17f-4 ctr 56 90 %
www.vishay.com 4 document number 83607 rev. 1.5, 26-oct-04 cny17f vishay semiconductors switching characteristics linear operation (without saturation) switching operation (with saturation) typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit turn-on time i f = 10 ma, v cc = 5.0 v, r l = 75 w t on 3.0 s rise time i f = 10 ma, v cc = 5.0 v, r l = 75 w t r 2.0 s turn-off time i f = 10 ma, v cc = 5.0 v, r l = 75 w t off 2.3 s fall time i f = 10 ma, v cc = 5.0 v, r l = 75 w t f 2.0 s cut-off frequency i f = 10 ma, v cc = 5.0 v, r l = 75 w f co 250 khz parameter test condition part symbol min ty p. max unit turn-on time i f = 20 ma cny17f-1 t on 3.0 s i f = 10 ma cny17f-2 t on 4.2 s cny17f-3 t on 4.2 s i f = 5.0 ma cny17f-4 t on 6.0 s rise time i f = 20 ma cny17f-1 t r 2.0 s i f = 10 ma cny17f-2 t r 3.0 s cny17f-3 t r 3.0 s i f = 5.0 ma cny17f-4 t r 4.6 s turn-off time i f = 20 ma cny17f-1 t off 18 s i f = 10 ma cny17f-2 t off 23 s cny17f-3 t off 23 s i f = 5.0 ma cny17f-4 t off 25 s fall time i f = 20 ma cny17f-1 t f 11 s i f = 10 ma cny17f-2 t f 14 s cny17f-3 t f 14 s i f = 5.0 ma cny17f-4 t f 15 s figure 1. linear operation ( without saturation) icny17f_01 r l =75 v cc =5 v i c 45 i f fire 2.sitchinoperation(ithsatration) i f 1k v cc =5 v 47 icny17f_02
cny17f document number 83607 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 5 figure 3. current transfer ratio vs. diode current figure 4. current transfer ratio vs. diode current figure 5. current transfer ratio vs. diode current 1 2 3 4 icny17f_03 (t a = C25c, v ce = 5.0 v) i c /i f =f(i f ) icny17f_04 1 2 3 4 (t a =0c,v ce = 5.0 v) i c /i f =f(i f ) 1 2 3 4 icny17f_05 (t a = 25c, v ce = 5.0 v) i c /i f =f(i f ) fire 6.crrenttransferratios.diodecrrent fire 7.crrenttransferratios.diodecrrent fire 8.crrenttransfer ratio(ctr)s.temperatre 1 2 3 4 icny17f_06 (t a = 50c, v ce = 5.0 v) a 1 2 3 4 icny17f_07 (t a = 75c, v ce = 5.0 v) 4 3 2 1 icny17f_08 (i f = 10 ma, v ce = 5.0 v) i c /i f = f (t) a
www.vishay.com 6 document number 83607 rev. 1.5, 26-oct-04 cny17f vishay semiconductors figure 9. output characteristics cny17f-2, -3 figure 10. forward voltage figure 11. collector-em itter off-state current icny17f_09 (t a = 25c) i c =f(v ce ) icny17f_10 v f =f(i f ) icny17f_11 i ceo = f (v,t) (t a = 75c, i f =0) fire 12.satrationvotaes.coectorcrrentandmodation depthcn17f1 fire 13.satrationvotaes.coectorcrrentandmodation depthcn17f2 fire 14.satrationvotaes.coectorcrrentandmodation depthcn17f3 icny17f_12 v cesat =f(i c )(t a = 25c) icny17f_13 v cesat =f(i c )(t a = 25c) icny17f_14 v cesat =f(i c )(t a = 25c)
cny17f document number 83607 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 7 figure 15. saturation voltage vs. collector current and modulation depth cny17f-4 figure 16. permissible pulse load figure 17. permissible power di ssipation for transistor and diode icny17f_15 v cesat =f(i c )(t a = 25c) v icny17f_16 d=parameter, t a = 25c, i f =f(t p ) icny17f_17 p tot =f(t a ) fire 18.permissie forardcrrentdiode fire 19.transistorcapacitance icny17f_18 i f =f(t a ) icny17f_19 c=f (v o )(t a = 25c, f=1.0 mhz)
www.vishay.com 8 document number 83607 rev. 1.5, 26-oct-04 cny17f vishay semiconductors package dimensions in inches (mm) i178004 .010 (.25) typ. .114 (2.90) .130 (3.0) .130 (3.30) .150 (3.81) .031 (0.80) min. .300 (7.62) typ. .031 (0.80) .035 (0.90) .100 (2.54) typ. .039 (1.00) min. .018 (0.45) .022 (0.55) .048 (0.45) .022 (0.55) .248 (6.30) .256 (6.50) .335 (8.50) .343 (8.70) pin one id 6 5 4 1 2 3 18 3C9 .300C.347 (7.62C8.81) 4 typ. iso method a min. 0.315 ( 8 .00) 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03) 0.012 (0.30 ) typ . 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9 0.014 (0.35) 0.010 (0.25) 0.400 (10.16) 0.430 (10.92) 0.307 (7. 8 ) 0.291 (7.4) 0.407 (10.36) 0.391 (9.96) option 6 0.315 ( 8 .0) mi n . 0.300 (7.62) typ . 0.1 8 0(4.6) 0.160 (4.1) 0.331 ( 8 .4) mi n . 0.406 (10.3) max. 0.02 8 (0.7) mi n . option 7 1 8 450
cny17f document number 83607 rev. 1.5, 26-oct-04 vishay semiconductors www.vishay.com 9 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health an d safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
